High-voltage pixel sensors for ATLAS upgrade
نویسندگان
چکیده
منابع مشابه
Simulations of planar pixel sensors for the ATLAS high luminosity upgrade
A physics-based device simulation was used to study the charge carrier distribution and the electric field configuration inside simplified two-dimensional models for pixel layouts based on the ATLAS pixel sensor. In order to study the behavior of such detectors under different levels of irradiation, a three-level defect model was implemented into the simulation. Using these models, the number o...
متن کاملHVMUX, the High Voltage Multiplexing for the ATLAS Tracker Upgrade
The increased luminosity of the HL-LHC will require more channels in the upgraded ATLAS Tracker, as a result of the finer detector segmentation. Thus, an upgraded and more efficient HV biasing of the sensors will also be needed and is among the many technological challenges facing the ATLAS Tracker Upgrade. A number of approaches, including the sharing of the same HV line among several sensors ...
متن کاملNovel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of no...
متن کاملRecent results of the ATLAS upgrade planar pixel sensors R&D project
To extend the physics reach of the LHC experiments, several upgrades to the accelerator complex are planned, culminating in the HL-LHC, which eventually leads to an increase of the peak luminosity by a factor of five to ten compared to the LHC design value. To cope with the higher occupancy and radiation damage also the LHC experiments will be upgraded. The ATLAS Planar Pixel Sensor R&D Project...
متن کاملTest Beam Results of ATLAS Pixel Sensors
Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n/n sensors with oxygenated silicon substrates. The experimental behaviour of the detectors after irradiation to 1.1 · 10 neq cmand 600 kGy is discussed. At the sensor bias voltage of 600 V the depleted depth is measured to b...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 2014
ISSN: 0168-9002
DOI: 10.1016/j.nima.2014.06.035